Infineon KP236N6165: High-Performance 650V CoolMOS™ Power Transistor for Advanced Switching Applications

The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics drives the continuous innovation in semiconductor technology. At the forefront of this evolution is the Infineon KP236N6165, a 650V superjunction MOSFET that sets a new benchmark for performance in advanced switching applications. Engineered with Infineon's proprietary CoolMOS™ technology, this power transistor is designed to meet the rigorous demands of modern switch-mode power supplies (SMPS), industrial drives, photovoltaic inverters, and EV charging infrastructure.

A defining characteristic of the KP236N6165 is its exceptionally low effective dynamic loss. This is achieved through a superior figure-of-merit (R DS(on) x E oss), which directly translates to minimized switching losses at both hard- and soft-switching conditions. This capability is paramount for systems operating at high switching frequencies, enabling designers to reduce the size of magnetic components and heat sinks, thereby increasing overall power density. The result is a more compact, lighter, and ultimately more efficient end product.

Beyond dynamic performance, the device boasts an ultra-low on-state resistance (R DS(on)) of just 36 mΩ (max). This low conduction loss ensures that the transistor remains cool under heavy load conditions, reducing thermal stress and improving system longevity. The robust 650V voltage rating provides a comfortable safety margin for operation in harsh electrical environments, such as those experiencing voltage spikes and transients, enhancing system robustness and field reliability.

The KP236N6165 also incorporates advanced features that simplify design and protect the device. It offers excellent dv/dt robustness and a very stable body diode, which is crucial for reliability in bridge topology configurations like PFC stages and half-bridges. Furthermore, its high parameter consistency allows for predictable performance and easier paralleling of multiple devices in high-current applications.

In summary, the Infineon KP236N6165 is not merely a component but a key enabler for the next generation of high-efficiency power systems. Its blend of minimal switching and conduction losses, high voltage robustness, and design-friendly characteristics makes it an superior choice for engineers pushing the boundaries of what's possible.

ICGOOODFIND: The Infineon KP236N6165 stands out as a pinnacle of power transistor design, offering an optimal balance of ultra-low dynamic loss, high power density, and superior reliability for demanding switching applications.

Keywords: CoolMOS™, Switching Losses, Power Density, 650V, R DS(on)