NXP BUK7K17-60E: A High-Performance 60V N-Channel Logic Level MOSFET

Release date:2026-06-02 Number of clicks:129

NXP BUK7K17-60E: A High-Performance 60V N-Channel Logic Level MOSFET

The NXP BUK7K17-60E stands as a premier solution in the realm of power management, engineered to deliver exceptional efficiency and robustness in a wide array of applications. As a 60V N-channel logic level MOSFET, it is specifically designed to be driven directly from microcontrollers, FPGAs, or other low-voltage control circuits (typically 5V or lower), simplifying system design and reducing component count.

A key highlight of this device is its remarkably low on-state resistance (RDS(on)), which is as low as 17 mΩ. This minimal resistance is crucial for minimizing conduction losses, leading to higher overall system efficiency and reduced heat generation. Whether deployed in DC-DC converters, motor control systems, or power switches, this low RDS(on) ensures that more power is delivered to the load and less is wasted as heat.

Furthermore, the BUK7K17-60E is built using NXP's advanced TrenchMOS technology. This process innovation yields a component that offers an optimal balance between low gate charge and low RDS(on). The low gate charge facilitates very fast switching speeds, which is essential for high-frequency switching applications, improving performance and potentially allowing for the use of smaller passive components.

The MOSFET is housed in a LFPAK (Leadless Frame Package) which provides superior thermal performance and power density compared to conventional packages like DPAK. Its compact footprint makes it an excellent choice for space-constrained PCB designs, while its excellent thermal characteristics ensure reliable operation under demanding conditions.

ICGOOODFIND: The NXP BUK7K17-60E is a top-tier logic level MOSFET that excels in providing high efficiency, fast switching, and robust performance. Its ability to be driven directly from low-voltage logic, combined with its low losses and excellent thermal package, makes it an ICGOODFIND for designers working on modern, efficient power electronics, from automotive systems to industrial controls and portable devices.

Keywords: Logic Level MOSFET, Low RDS(on), TrenchMOS Technology, LFPAK Package, High-Efficiency Switching.

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