Infineon IPD320N20N3GATMA1 200V OptiMOS™ 5 Power Transistor: Datasheet, Features, and Applications

In the realm of power electronics, achieving high efficiency and reliability in switching applications is paramount. The Infineon IPD320N20N3GATMA1, a 200V N-channel power MOSFET from the advanced OptiMOS™ 5 technology family, stands out as a premier solution designed to meet these demanding requirements. This transistor is engineered to deliver exceptional performance in a wide array of applications, from industrial motor drives to advanced power supplies.

Key Datasheet Parameters

A quick glance at the datasheet reveals the robust capabilities of this component. It boasts a continuous drain current (I_D) of 320A at 25°C, supported by an ultra-low maximum on-state resistance (R_DS(on)) of just 1.6 mΩ at 10V. This exceptionally low R_DS(on) is a hallmark of the OptiMOS™ 5 technology, directly translating to minimal conduction losses and higher overall system efficiency. The device offers a 200V drain-source voltage (V_DS) rating, making it suitable for operations in higher voltage environments. Furthermore, it features an industry-standard TO-Leadless (TOLL) package, which provides an excellent power-to-footprint ratio and superior thermal performance for high-power-density designs.

Standout Features

The IPD320N20N3GATMA1 is packed with features that make it a superior choice for designers:

Ultra-Low On-Resistance: The cornerstone of its efficiency, leading to reduced heat generation.

High Current Handling: Capable of managing very high peak currents, which is critical for handling transient loads.

Optimized Switching Performance: The device exhibits low gate charge (Q_G) and low figures of merit (FOM), which ensure fast switching speeds and lower switching losses. This is crucial for high-frequency operations.

Enhanced Ruggedness: It possesses a high avalanche energy rating and is qualified for 100% repetitive avalanche testing, ensuring high reliability and robustness in harsh operating conditions.

Leadless (TOLL) Package: This package minimizes parasitic inductance, improves thermal impedance, and is RoHS compliant, facilitating modern, compact PCB designs.

Primary Applications

The combination of high current capability, low losses, and a robust package makes this MOSFET ideal for a diverse set of high-performance applications. Key areas include:

Industrial Motor Drives and Control: Providing efficient and reliable switching for controllers and inverters.

Switched-Mode Power Supplies (SMPS): Particularly in server, telecom, and high-end computing power supplies where efficiency standards are stringent.

Solar Inverters and Energy Storage Systems: Maximizing power conversion efficiency in renewable energy applications.

Battery Management Systems (BMS) and Protection: Used in high-current discharge and charge paths due to its low R_DS(on).

Arc Welding Equipment: Where reliability and high current are non-negotiable.

ICGOOODFIND

The Infineon IPD320N20N3GATMA1 OptiMOS™ 5 power transistor is a top-tier component for high-power, high-efficiency design challenges. Its blend of an ultra-low on-resistance, impressive current rating, and thermally efficient package provides engineers with a key enabler for creating next-generation power systems that are both smaller and more efficient. For anyone designing in the 200V space, this MOSFET represents a compelling option that balances performance, size, and cost.

Keywords: OptiMOS™ 5, Ultra-Low R_DS(on), High Current MOSFET, TOLL Package, Power Efficiency